in
these naturally p- and n-type materials, respectively. Mu
diffusion in GaN sets is only above 600 K, with an activation energy of 1
eV.
Muon and muonium states in the wide-bandgap semiconductors BN, AlN, and GaN
are characterised by various types of µSR measurement on polycrystalline
samples. The muonium fractions range from 80% in hexagonal BN to zero in GaN.
The hyperfine constants estimated from repolarization curves are 80% of the free
muonium value in BN and 95% in AlN, with superhyperfine interactions to the host
nuclei is evident. The electronically diamagnetic states show strong
level-crossing resonances in AlN and GaN (although none is detectable in BN).
These have the signature of cross-relaxation to 14N in AlN and to
69Ga and
71Ga in GaN,
suggesting that the diamagnetic states are Mu+ and Mu in
these naturally p- and n-type materials, respectively. Mu
diffusion in GaN sets is only above 600 K, with an activation energy of 1
eV.
Keywords: Semiconductors; Muonium; Hydrogen; Level crossing resonance
*Correspondence address: ISIS Facility, Rutherford Appleton Lab, Chilton, Oxfordshire, OX11 0QX, UK. Fax: +44-0-1235-445477
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